High-rate Reactive Sputtering of Dielectric Stoichiometric Films Hochleistung Reaktives Sputtern Von Dielektrischen Stöchiometrischen Filmen
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AlNXOY THIN FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING
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In sputtering deposition process of TiO2, metal Ti or sintered TiO2 target is used as deposition source. In this study, we have compared the characteristic of target materials. When TiO2 target was used, stoichiometric TiO2 films was deposited under the Ar atmosphere containing 1.0% of oxygen. The highest sputtering rate under this atmosphere was 3.9nm/min at 3.4W/cm2. But, sintered TiO2 target...
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تاریخ انتشار 2015